Speaker
Description
Point defects have emerged as a powerful tool for advancing knowledge and technology. Their influence extends to cutting-edge fields such as quantum technologies, enabling significant findings and driving remarkable scientific progress.
This talk will focus on point defects in wide-band-gap semiconductors as qubits platforms for quantum technologies applications. A roadmap for developing the study of the properties that materials exhibit with defects will be discussed, as well as the use of computational tools such as DFT. Futhermore, a study of the NV center in diamond is included as a guide for the exploration of candidate defects in c-BN. Four defects are investigated in c-BN: $\mathrm{N}_\mathrm{{B}}$ with a charge state $+1$ exhibits a doublet ground-state spin. Nevertheless, it is also reported as a color center due to its ZPL of $1.64$ eV ($\lambda = 757$ nm). Finally, the three complex defects with neutral charges states exhibits the desired triplet ground-state spin. $V_{\mathrm{B}}\!-\!V_{\mathrm{N}}$ reports a ZPL of $0.826$ eV ($\lambda = 1503$ nm), $V_{\mathrm{B}}\!-\!\mathrm{C}_{\mathrm{B}}$ reports a ZPL of $0.933$ eV ($\lambda = 1331$ nm), and $V_{\mathrm{B}}\!-\!\mathrm{Si}_{\mathrm{B}}$ report a ZPL of $1.256$ eV ($\lambda = 988$ nm). All these complex defects emit at telecom wavelenghts, making them promising candidates for quantum communication applications.
